Part Number Hot Search : 
IURC4251 BA5567 EB622 2SJ661 FMMZ5245 HVC200A AON6452 MAX4053C
Product Description
Full Text Search

IRGB4059DPBF - INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODEINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

IRGB4059DPBF_1256415.PDF Datasheet


 Full text search : INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODEINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE


 Related Part Number
PART Description Maker
IRG4BC40K Insulated Gate Bipolar Transistors (IGBTs)(短路额定超快速绝缘栅型双极型晶体 绝缘门双极晶体管IGBTs)(短路额定超快速绝缘栅型双极型晶体管)
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.1V, @Vge=15V, Ic=25A)
600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package
International Rectifier, Corp.
IRF[International Rectifier]
GT40G121 Insulated Gate Bipolar Transistor Silicon N Channel IGBT The 4th Generation Current Resonance Inverter Switching Applications
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
TOSHIBA[Toshiba Semiconductor]
IRG7PH35U-EP IRG7PH35UPBF IRG7PH35UPBF-15 55 A, 1200 V, N-CHANNEL IGBT, TO-247AD
INSULATED GATE BIPOLAR TRANSISTOR
   INSULATED GATE BIPOLAR TRANSISTOR
International Rectifier
GT15M321 INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
TOSHIBA[Toshiba Semiconductor]
GT15Q311 INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
TOSHIBA[Toshiba Semiconductor]
MGP7N60E-D Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
ON Semiconductor
MGY25N120-D Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
ON Semiconductor
MGS05N60D_D ON1885 MGS05N60D MGS05N60D-D Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
IGBT 0.5 A @ 25 600 V
From old datasheet system
ONSEMI[ON Semiconductor]
CM400HA-28H High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
HIGH POWER SWITCHING USE INSULATED TYPE
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
CM1200HA-50H High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
HIGH POWER SWITCHING USE INSULATED TYPE
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
2PG303 Insulated Gate Bipolar Transistor
Panasonic
MP6753 INSULATED GATE BIPOLAR TRANSISTOR
Toshiba Semiconductor
 
 Related keyword From Full Text Search System
IRGB4059DPBF Noise IRGB4059DPBF chip IRGB4059DPBF circuit diagram IRGB4059DPBF specifications IRGB4059DPBF Outputs
IRGB4059DPBF rectifier IRGB4059DPBF adc IRGB4059DPBF Operation IRGB4059DPBF device IRGB4059DPBF eeprom pdf
 

 

Price & Availability of IRGB4059DPBF

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.59790802001953